パブリケーション

査読付論文 / Journals

2022

  • Noboru Sato, Yuichi Funato, Kohei Shima, Hidetoshi Sugiura, Yasuyuki Fukushima, Takeshi Momose, Mitsuo Koshi, and Yukihiro Shimogaki, "Identifying the mechanism of formation of chlorinated silane polymer by-products during chemical vapor infiltration of SiC from CH3SiCl3/2H", Int. J. Chem. Kinet. 54 (2021) 300–308.
  • Yuyuan Huang, Kuniaki Konishi, Momoko Deura, Yusuke Shimoyama, Junji Yumoto, Makoto Kuwata-Gonokami, Yukihiro Shimogaki, and Takeshi Momose, "Suitability of metallic materials for constructing metal-coated dielectric terahertz waveguides", J. Appl. Phys. 131 (2022) 105106.

2021

  • Yuyuan Huang, Kuniaki Konishi, Momoko Deura, Yusuke Shimoyama, Junji Yumoto, Makoto Kuwata-Gonokami, Yukihiro Shimogaki, and Takeshi Momose, "Development of a model for evaluating propagation loss of metal-coated dielectric terahertz waveguides", J. Appl. Phys. 130 (2021) 055104.
  • Noboru Sato, Yuichi Funato, Kohei Shima, Hidetoshi Sugiura, Yasuyuki Fukushima, Takeshi Momose, Mitsuo Koshi, and Yukihiro Shimogaki, "Elementary gas-phase reactions of radical species during chemical vapor deposition of silicon carbide using CH3SiCl3", Int. J. Chem. Kinet. 53 (2021) 638–645.
  • Momoko Deura, Hiroki Sato, Jun Yamaguchi, Tomoko Hirabaru, Hayato Kubo, Takeshi Momose, Takahito Tanibuchi, and Yukihiro Shimogaki, "Kinetic analysis of face-centered-cubic Ti1-xAlxN film deposition by chemical vapor deposition", Mater. Sci. Eng. B , 264 (2021) 114992.

2020

  • Kohei Shima, Yuichi Funato, Noboru Sato, Yasuyuki Fukushima, Takeshi Momose, and Yukihiro Shimogaki, "Porous Membranes as Sacrificial Layers Enabling Conformal Chemical Vapor Deposition Involving Multiple Film-Forming Species", ACS Appl. Mater. Interfaces, 12 (2020) 51016.
  • Noboru Sato, Yuichi Funato, Yasuyuki Fukushima, Takeshi Momose, Mitsuo Koshi, and Yukihiro Shimogaki, "Modeling of the Elementary Gas-phase Reaction during Chemical Vapor Deposition of Silicon Carbide from CH3SiCl3/H2", Int J Chem Kinet., 52 (2020) .
  • Guangjie Yuan, Hideharu Shimizu, Takeshi Momose, and Yukihiro Shimogaki, "Hot-wire-assisted Atomic Layer Deposition of High-quality Ru Thin Films in the Absence of Oxidization", ECS J. Solid State Sci. Technol., 9 (2020) 024010.
  • Naoto Usami, Etsuko Ota, Akio Higo, Takeshi Momose, and Yoshio Mita, "Area-selective Cu film growth on TiN and SiO2 by supercritical fluids deposition", IEEJ Trans. Sensors Micromachines 140 (2020) 31-36.

2019

  • Kohei Shima, Noboru Sato, Yuichi Funato, Yasuyuki Fukushima, Takeshi Momose, and Yukihiro Shimogaki, "Identification of film-forming species during SiC-CVD of CH3SiCl3/H2 by exploiting deep microtrenches", ECS J. Solid State Sci. Technol. 8 (2019) P423-P429.
  • Naoto Usami, Etsuko Ota, Takeshi Momose, Akio Higo, and Yoshio Mita, "Influence of Pre Treatment on Adhesion Quality of Supercritical-fluid-deposited (SCFD) Cu Film on Si", Sensors and Materials 31 (2019) 2481-2496.
  • Guangjie Yuan, Hideharu Shimizu, Takeshi Momose, and Yukihiro Shimogaki, "Growth mechanism of hot-wire-assisted atomic layer deposition of nickel to achieve conformal deposition on trenches: role of physisorption and chemisorption", Jpn. J. Appl. Phys. 58 (2019) 075505.
  • Momoko Deura, Takuya Nakahara, Takeshi Momose, Yoshiaki Nakano, Masakazu Sugiyama, and Yukihiro Shimogaki, "Strain control of GaN grown on Si substrates using an AlGaN interlayer", J. Cryst. Growth 514 (2019) 65-69.

2018

  • Momoko Deura, Kentaro Kutsukake, Yutaka Ohno, Ichiro Yonenaga, and Takashi Taniguchi, "Mechanical Properties of Cubic-BN(111) Bulk Single Crystal Evaluated by Nanoindentation", Phys. Status Solidi B 255 (2018) 1700473.
  • Yu Zhao, Kyubong Jung, Yukihiro Shimogaki, and Takeshi Momose, "Kinetic effects of methanol addition on supercritical fluid deposition of TiO2", J. Supercrit. Fluids 138 (2018) 63-72.

2017

  • Yu Zhao, Kyubong Jung, Yusuke Shimoyama, Yukihiro Shimogaki, and Takeshi Momose, "Conformal bismuth titanate formation using supercritical fluid deposition", ECS J. Solid State Sci. Technol. 6 (2017) P483-P488.
  • Yuichi Funato, Noboru Sato, Yasuyuki Fukushima, Hidetoshi Sugiura, Takeshi Momose, and Yukihiro Shimogaki, "Fundamental evaluation of gas-phase elementary reaction models for silicon carbide chemical vapor deposition", ECS J. Solid State Sci. Technol. 6 (2017) P399-P404.
  • Kohei Shima, Noboru Sato, Yuichi Funato, Yasuyuki Fukushima, Takeshi Momose, and Yukihiro Shimogaki, "Separate evaluation of multiple film-forming species in chemical vapor deposition of SiC using high aspect-ratio microchannels", Jpn. J. Appl. Phys. 56 (2017) 06HE02.
  • Yu Zhao, Yusuke Shimoyama, Takeshi Momose, and Yukihiro Shimogaki, "Experimental approach to estimate diffusivity of metal organics in supercritical CO2 at high temperatures", J. Supercrit. Fluids 120 (2017) 209-217.
  • Takaaki Tomai, Yoji Yasui, Shinji Watanabe, Yuta Nakayasu, Liwen Sang, Masatomo Sumiya, Takeshi Momose, and Itaru Honma, "Fabrication of 3-dimensional CuInS2 solar cell structure via supercritical fluid processings", J. Supercrit. Fluids 120 (2017) 448-452.

2016

  • Takeshi Momose, Tatsuya Kamiya, Yudai Suzuki, Stefano Ravasio, Carlo Cavallotti, Masakazu Sugiyama, and Yukihiro Shimogaki, "Kinetic analysis of GaN-MOVPE via thickness profiles in the gas flow direction with systematically varied growth conditions", ECS J. Solid State Sci. Technol. 5 (2016) P164-P171.
  • Kohei Shima, Yuichi Funato, Hidetoshi Suguira, Noboru Sato, Yasuyuki Fukushima, Takeshi Momose, and Yukihiro Shimogaki, "High aspect-ratio parallel-plate microchannels applicable to kinetic analysis of chemical vapor deposition", Adv. Mater. Int. 3 (2016) 1600254.

2015

  • Kohei Shima, Hideharu Shimizu, Takeshi Momose, and Yukihiro Shimogaki, "Comparative study on Cu-CVD nucleation using β-diketonato and amidinato precursors for sub-10-nm-thick continuous film growth", ECS J. Solid State Sci. Technol. 4 (2015) P305-P313.
  • Stefano Ravasio, Takeshi Momose, Katsushi Fuji, Yukihiro Shimogaki, Masakazu Sugiyama, and Carlo Cavallotti, "Analysis of the Gas Phase Kinetics active during GaN deposition from NH3 and Ga(CH3)3", J. Phys. Chem. A 119 (2015) 7858-7871.
  • Takeshi Momose, Hiroto Kawada, and Yukihiro Shimogaki, "Fabrication of Ni mold for nanoimprint lithography by combining two supercritical fluid-based deposition technologies", Jpn. J. Appl. Phys. 54 (2015) 076501.
  • Takeshi Momose, Aiko Kondo, Hideo Yamada, Junji Ohara, Yasuhiro Kitamura, Hirohisa Uchida, Yukihiro Shimogaki, and Masakazu Sugiyama, "Solubility of bis-(2,2,6,6-tetramethyl-3,5-heptanedionato)copper(II) in mixed supercritical CO2 and H2 systems for application in supercritical fluid deposition of Cu", J. Supercrit. Fluids 105 (2015) 193-200.
  • Hideharu Shimizu, Kohei Shima, Yudai Suzuki, Takeshi Momose, and Yukihiro Shimogaki, "Precursor-based Designs of Nano-Structures and Their Processing for Co(W) Alloy Films as a Single Layered Barrier/Liner Layer in Future Cu-Interconnect", J. Mater. Chem. C 11 (2015) 2500-2510.
  • Kohei Shima, Hideharu Shimizu, Takeshi Momose, and Yukihiro Shimogaki, "Study on the Adhesion Strength of CVD-Cu Films with ALD-Co(W) Underlayers Made Using Amidinato Precursors", ECS J. Solid State Sci. Technol. 4 (2015) P20-P29.

2014

  • K. Shima, Y. Tu, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, and Y. Shimogaki: “Role of W and Mn for reliable 1X nanometer-node ULSI Cu interconnects proved by atom probe tomography”, Applied Physics Letters, 105, 133512 (2014).
  • T. Momose, M. Sugiyama, E. Kondoh, and Y. Shimogaki: “Design of a Multi-Wafer Reactor for Supercritical Fluid Deposition of Cu in Mass Production: (1) Reaction Mechanism and Kinetics”, J. Chemical Engineering of Japan, 47, 737-742 (2014).
  • T. Momose, M. Sugiyama, E. Kondoh, and Y. Shimogaki: “Design of a Multi-Wafer Reactor for Supercritical Fluid Deposition of Cu in Mass Production: (2) Benchmarks for Single- and Multiple-Wafer Reactors”, J. Chemical Engineering of Japan, 47, 743-749 (2014).
  • G. Yuan., H. Shimizu, T. Momose, and Y. Shimogaki: “Role of NH3 feeding period to realize high-quality nickel films by hot-wire-assisted atomic layer deposition”, Microelectronic Engineering, 120, 230-234 (2014).
  • N. Sato and Y. Shimogaki: “Comparative Surface Study on Hydrogen Terminated Si Surface Covered with Alcohols”, ECS J. Solid State Science and Technology, 3, N46-N51 (2014).
  • N. Sato and Y. Shimogaki: “Dependency of the Underlying Surface Condition on Dielectric Film Removal at Wafer Edge”, ECS J. Solid State Science and Technology, 3, N3041-N3045 (2014).
  • K. Shima, H. Shimizu, T. Momose, and Y. Shimogaki: “Study on the Adhesion Strength of CVD-Cu Films with CVD/ALD-Co(W) Underlayers Made Using Carbonyl Precursors”, ECS Solid State Letters, 3, P20-P22 (2014).
  • Yu Zhao, K. Jung, T. Momose, and Y. Shimogaki: “Kinetic study of alcohol-assisted supercritical fluid deposition of TiO2”, Thin Solid Films, 553, 184-187 (2014).
  • G. Yuan., H. Shimizu, T. Momose, and Y. Shimogaki: “Kinetic study on hot-wire-assisted atomic layer deposition of nickel thin films”, J. Vacuum Science and Technology A, 32, 01A104 (2014).
  • N. Sato and Y. Shimogaki: “Comparative Surface Study on Silicon Dioxide Film Covered with Alcohols”, ECS J. Solid State Science and Technology, 3, N3001-N3005 (2014).

2013

  • T. Uejima, T. Momose, M. Sugiyama, E. Kondoh, and Y. Shimogaki: “One-Step Fabrication of Copper Thin Films on Insulators Using Supercritical Fluid Deposition”, J. Electrochemical Society, 160, D3290-D3294 (2013).
  • Y. Fukushima, N. Sato, Y. Funato, H. Sugiura, K. Hotozuka, T. Momose, and Y. Shimogaki: “Multi-Scale Analysis and Elementary Reaction Simulation of SiC-CVD Using CH3SiCl3/H2 I. Effect of Reaction Temperature”, ECS J. Solid State Science and Technology, 2, P492-P497 (2013).
  • N. Sato and Y. Shimogaki: “Gap Filling Model of O3-Tetraethylorthosilicate Film Formed on an Underlying Layer Pretreated with Organic Solvent”, ECS J. Solid State Science and Technology, 2, N237-N242 (2013).
  • H. Shimizu, S. Nagano, A. Uedono, N. Tajima, T. Momose, and Y. Shimogaki: “Material design of plasma-enhanced chemical vapor deposition SiCH films for low-k cap layers in the further scaling of ultra-large-sclae integrated devices-Cu interconnects”, Science and Technology of Advanced Materials, 14, 055005 (2013).
  • H. Shimizu, A. Kumamoto, Y. Kobayashi, K. Shima, T. Momose, T. Nogami, and Y. Shimogaki: “Self-Assembled Nano-Stuffing Structure in CVD and ALD Co(W) Films as a Single-Layered Barrier/Liner for Future Cu-Interconnects”, ECS J. Solid State Science and Technology, 2, P471-P477 (2013).
  • Y. Zhao, K. Jung, T. Momose, and Y. Shimogaki: “Smooth and Conformal TiO2 Thin-Film Formation Using Supercritical Fluid Deposition”,ECS J. Solid State Science and Technology, 2, N191-195 (2013).
  • N. Sato and Y. Shimogaki: “Relationship between Surface Free Energy of Underlying Layers and O3-TEOS Chemical Vapor Deposition Dielectric Science and Materials”, ECS J. Solid State Science and Technology, 2, N187-N190 (2013).
  • K. Kaneko, M. Ogino, R. Shimizu, M. Koshi, and Y. Shimogaki: “Film Thickness Prediction of Poly-Silicon LPCVD Process with a Simplified Two-step Surface Reaction Model”, ECS J. Solid State Science and Technology, 2, N182-N186 (2013).
  • K. Jung, Y. Zhao, T. Momose, and Y. Shimogaki: “Potential Step Coverage for Supercritical Fluid Deposition of TiO2 by Numerical Simulation and Microcavity Analysis”, ECS Solid State Letters, 2, P79-P81 (2013).
  • K. Jung, Y. Zhao, T. Momose, and Y. Shimogaki: “Ethanol-assisted flow-type supercritical fluid deposition of SrRuO3 for stoichiometric film formation”, ECS Solid State Lettersv, 2, P70-P72 (2013).
  • K. Jung, T. Momose, and Y. Shimogaki: “Strontium ruthenium oxide deposition in supercritical carbon dioxide using a closed reactor system”, J. Supercritical Fluids, 79, 244-250 (2013).
  • H. Shimizu, Y. Suzuki, T. Nogami, N. Tajima, T. Momose, Y. Kobayashi, and Y. Shimogaki: “Chemical Vapor Deposited and Atomic Layer Deposited Co(W) Films Using Amidinato Precursors as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects”, ECS J. Solid State Science and Technology, 2, P311-P315 (2013).
  • H. Shimizu, K. Sakoda, and Y. Shimogaki: “CVD of cobalt-tungsten alloy film as a novel copper diffusion barrier”, Microelectronic Engineering, 106, 91-95 (2013).

2012

  • T. Nakano, T. Shioda, N. Enomoto, E. Abe, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM”, J. Crystal Growth, 347, 25-30 (2012).
  • H. Shimizu, K. Sakoda, T. Momose, and Y. Shimogaki: “Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects”, Jpn. J. Appl. Phys., 51, 05EB02 (2012).
  • Y. Fukushima, T. Nakano, Y. Nakano, and Y. Shimogaki: “Control of In Surface Segregation and Inter-Diffusion in GaAs on InGaP Grown by Metal-Organic Vapor Phase Epitaxy”, Jpn. J. Appl. Phys., 51, 055601 (2012).
  • T. Momose, T. Uejima, H. Yamada, Y. Shimogaki, and M. Sugiyama: “Ultra-Conformal Metal Coating on High-Aspect-Ratio Three-Dimensional Structures Using Supercritical Fluid: Controlled Selectivity/Non-Selectivity”, Jpn. J. Appl. Phys., 51, 056502 (2012).
  • T. Saito, KE. Oshima, Y. Shimogaki, Y. Egashira, K. Sugawara, K. Takahiro, S. Nagata, S. Yamaguchi, and H. Komiyama: “Low Temperature Chemical Vapor Deposition of Silicon-rich Tungsten Silicide Films from Tungsten Hexafluoride - Disilane Pre-activated Mixtures”, International J. Chemical Reactor Engineering, 10, A45 (2012).
  • N. Sato and Y. Shimogaki: “Pattern Density Dependency of the Underlying Layer on O3-Tetraethylorthosilicate (TEOS) Film Formation”, ECS J. Solid State Science and Technology, 1, N91-N96 (2012).
  • N. Sato and Y. Shimogaki: “O3-TEOS CVD Film Formation on Thermal SiO2 Pre-Coated with Ethanol”, ECS J. Solid State Science and Technology, 1, N73-N78 (2012).
  • N. Sato and Y. Shimogaki: “Adsorption Model of Organic Molecules on the Surface of Thermally Oxidized Silicon”, ECS J. Solid State Science and Technology, 1, N61-N66 (2012).
  • N. Sato, O. Yamazaki, and Y. Shimogaki: “Impacts of Chemical Supply Flow on Particle Removability in Wet Clean Bath”, J. Electrochem. Soc., 159, H367-H372 (2012).
  • H. Shimizu, K. Sakoda, T. Momose, M. Koshi, and Y. Shimogaki: “Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation”, J. Vac. Sci. Tech. A, 30, 01A144 (2012).

2011

  • H. Sodabanlu, J. Yang, T. Tanemura, M. Sugiyama, and Y. Nakano: “Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy”, Appl. Phys. Lett., 99, 151102 (2011).
  • Y. Fukushima, K. Hotozuka, and Y. Shimogaki: “Multiscale Analysis of Silicon Carbide-Chemical Vapor Deposition Process”, J. Nanoscience and Nanotechnology, 11, 7988-7993 (2011).
  • H. Shimizu, N. Tajima, T. Kada, S. Nagano, and Y. Shimogaki: “Novel Precursors for SiCH Low-k Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films”, Jpn. J. Appl. Phys., 50, 08KA01 (2011).
  • H. Shimizu, N. Tajima, T. Kada, S. Nagano, and Y. Shimogaki: “Isobutyl Silane Precursors for SiCH Low-k Cap Layer beyond the 22 nm Node: Analysis of Film Structure for Compatibility of Lower k-value and High Barrier Properties”, Jpn. J. Appl. Phys., 50, 05EB01 (2011).
  • M. Deura, Y. Kondo, M. Takenaka, S. Takagi, Y. Shimogaki, Y. Nakano, and M. Sugiyama: “High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal-Organic Vapor Phase Epitaxy”, Jpn. J. Appl. Phys., 50, 04DH07 (2011).
  • J. Yang, H. Sodabanlu, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Fabrication of n-Type GaN Layers by the Pulse Injection Method at 950ºC for Intersubband Devices”, Electrochemical and Solid State Letters, 14, H143-H145 (2011).
  • O. Ichikawa, N. Fukuhara, M. Hata, T. Nakano, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement”, Jpn. J. Appl. Phys., 50, 011201 (2011).
  • J. Yang, H. Sodabanlu, M. Sugiyama, and Y. Nakano: “Intersubband transition at 1.55 μm inAlN/GaN multiple quantum wells by metal organic vapor phase epitaxy using the pulse injection method at 770°C”, J. Crystal Growth, 314, 252-257 (2011).
  • N. Sato and Y. Shimogaki: “Particle Generation on Hydrogen-Terminated Si Surface by Brush Scrubbing of Polyvinyl Alcohol”, J. Electrochem. Soc., 158, D651-D656 (2011).

2010

  • G. He, S. Toyoda, Y. Shimogaki, and M. Oshima: “Thermal stability and chemical bonding states of AlOxNy/SiO2/Si gate stacks revealed by synchrotron radiation photoemission spectroscopy”, Appl. Surf. Sci., 257, 1638-1642 (2010).
  • T. Saito, T. Momose, T. Hoshi, M. Takai, K. Ishihara, and Y. Shimogaki: “Surface Modification of SiO2 Microchannels with Biocompatible Polymer Using Supercritical Carbon Dioxide”, Jpn. J. Appl. Phys., 49, 116503 (2010).
  • T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy”, Appl. Phys. Exp., 3, 092104 (2010).
  • T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Selectivity enhancement by hydrogen addition in selective area metal-organic vapor phase epitaxy of GaN and InGaN”, Physica Status Solidi A-Applications and Materials Science, 207, 1375-1378 (2010).
  • Y. Terada, Y. Shimogaki, Y. Nakano, and M. Sugiyama: “In situ Anti-Oxidation Treatment in GaAs MOVPE by As Desorption and Passivation with AlP”, J. Crystal Growth, 312, 1359-1363 (2010).
  • E. Kondoh, M. Matsubara, K. Tamai, and Y. Shimogaki: “Initial Cu Growth in Cu-Seeded and Ru-Lined Narrow Trenches for Supercritical Fluid Cu Chemical Deposition”, Jpn. J. Appl. Phys., 49, 05FA07 (2010).
  • T. Momose, M. Sugiyama, E. Kondoh, and Y. Shimogaki: “Step Coverage Quality of Cu Films by Supercritical Fluid Deposition Compared with Chemical Vapor Deposition”, Jpn. J. Appl. Phys., 49, 05FF01 (2010).
  • Y. Terada, Y. Shimogaki, Y. Nakano, and M. Sugiyama: “Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved Metal Oxide Semiconductor Characteristics”, Jpn. J. Appl. Phys., 49, 04DF04 (2010).
  • G. He, X.L. Wang, M. Oshima, and Y. Shimogaki: “Metalorganic Chemical Vapor Deposition of Al2O3 Thin Films from Dimethylaluminumhydride and O2”, Jpn. J. Appl. Phys., 49, 031502 (2010).
  • H. Song, J.A.T. Norman, and Y. Shimogaki: “Evaluation of a novel unfluorinated copper precursor for chemical vapor deposition”, Microelect. Eng., 87, 249-253 (2010).

2009

  • C. Zhen, G. He, X. Wang, and Y. Shimogaki: “SiON as a barrier layer for depositing an Al2O3 thin film on Si for gate applications”, Surface and Interface Analysis, 41, 956-959 (2009).
  • H.-L. Lu, X.-L. Wang, M. Sugiyama, and Y. Shimogaki: “Investigation on GaAs surface treated with dimethylaluminumhydride”, Appl. Phys. Lett., 95, 212102 (2009).
  • J. Yang, H. Sodabanlu, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Blue-Shift of Intersubband Transition Wavelength in AlN/GaN Multiple Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy Using Pulse Injection Method”, Appl. Phys. Lett., 95, 162111 (2009).
  • H. Sodabanlu, J. Yang, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Strain effects on the intersubband transitions in GaN/AlN MQWs grown by low-temperature MOVPE with AlGaN interlayer”, Appl. Phys. Lett., 95, 161908 (2009).
  • H.-L. Lu, Y. Terada, Y. Shimogaki, Y. Nakano, and M. Sugiyama: “In situ passivation of InP surface using H2S during metal organic vapor phase epitaxy”, Appl. Phys. Lett., 95, 152103 (2009).
  • T. Shioda, Y. Tomita, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Selective Area Metal-Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multi-Color Emission”, IEEE J. Selected Topics in Quantum Electonics, 15, 1053-1065 (2009).
  • G. He, S. Toyoda, Y. Shimogaki, and M. Oshima: “Chemical Bonding States and Band Alignment of Ultrathin AlOxNy/SiGate Stacks Grown by Metalorganic Chemical Vapor Deposition”, Appl. Phys. Exp., 2, 075503 (2009).
  • H. Sodabanlu, J. Yang, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Intersubband Transition at 1.52 μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy”, Appl. Phys. Exp., 2, 061002 (2009).
  • T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Selective area metal-organic vapor phase epitaxy of InN, GaN and InGaN covering whole composition range”, J. Crystal Growth, 311, 2809-2812 (2009).
  • Y. Tomita, T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Role of vapor-phase diffusion in selective-area MOVPE of InGaN/GaN MQWs”, J. Crystal Growth, 311, 2813-2816 (2009).
  • J. Yang, H. Sodabanlu, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy”, Appl. Phys. Exp., 2, 051004 (2009).
  • M. Matsubara, M. Hirose, K. Tamai, Y. Shimogaki, and E. Kondoh: “Deposition of Cu thin films in supercritical carbon dioxide solutions from a F-free copper(II) β-diketone complex - Study on deposition kinetics using a flow-type reaction system –”, J. Electrochem. Soc., 156, H443-447 (2009).
  • Y. Wang, H. Song, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique”, Jpn. J. Appl. Phys., 48, 041102 (2009).
  • H. Song, Y. Wang, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Zn and S Doping in GaAs Selective Area Growth by Metalorganic Vapor Phase Epitaxy”, Jpn. J. Appl. Phys., 48, 031101 (2009).
  • J.-S. Yang, H. Sodabanlu, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Process Design of Pulse Injection Method for Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN at 800°C”, J. Crystal Growth, 311, 383-388 (2009).
  • T. Nakano, T. Shioda, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Competitive Kinetics Model to Explain Surface Segregation of Indium During InGaP Growth by Using Metal Organic Vapor Phase Epitaxy”,Jpn. J. Appl. Phys., 48, 011101 (2009).

2008

  • Y. Wang, H. Song, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Nonlinear Kinetic Analysis of InP and InAs Metal Organic Vapor Phase Epitaxy by Selective Area Growth Technique”, Jpn. J. Appl. Phys., 47, 8269-8274 (2008).
  • H. Song, Y. Wang, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Non-linear surface reaction kinetics in GaAs selective area MOVPE”, J. Crystal Growth, 310, 4731-4735 (2008).
  • M. Deura, Y. Shimogaki, Y. Nakano, M. Sugiyama: “Kinetic analysis of surface adsorption layer for InGaAsP-related binary materials using in situ RAS”, J. Crystal Growth, 310, 4736-4740 (2008).
  • Y. Terada, M. Deura, Y. Shimogaki, M. Sugiyama, and Y. Nakano: “In Situ passivation of GaAs surface with aluminum oxide with MOVPE”, J. Crystal Growth, 310, 4808-4812 (2008).
  • T. Momose, T. Ohkubo, M. Sugiyama, and Y. Shimogaki: "Effect of liquid additives in supercritical fluid deposition of copper for enhancing deposition chemistry", Thin Solid Films, 517, 674-680 (2008).
  • Y. Wang, H. Song, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Surface reaction kinetics of InP and InAs MOVPE analyzed by selective area growth technique”, Jpn. J. Appl. Phys., 47, 7788-7792 (2008).
  • T. Momose, M. Sugiyama, E. Kondoh, and Y. Shimogaki: “Conformal Deposition and Gap-Filling of Copper into Ultra Narrow Patterns by Supercritical Fluid Deposition”, Appl. Phys. Exp., 1, 097002 (2008).
  • T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Kinetic Analysis of InN Selective Area Metal-Organic Vapor Phase Epitaxy”, Appl. Phys. Exp., 1, 071102 (2008).
  • Y. Tokumoto, N. Shibata, T. Mizoguchi, M. Sugiyama, Y. Shimogaki, J.-S. Yang, T. Yamamoto, Y. Ikuhara: “High-resolution transmission electron microscopy (HRTEM) observation of dislocation structures in AlN thin films”, J. Materials Research, 23, 2188-2194 (2008).
  • R. Onitsuka, M. Sugiyama, Y. Shimogaki, and Y. Nakano: “Reactor-scale profile of group-V composition of InGaAsP studied by fluid dynamics simulation and in situ analysis of surface kinetics”, J. Crystal Growth, 310, 3042-3048 (2008).
  • W. Wang, T. Nabatame, and Y. Shimogaki: "Preparation of conductive HfN by post rapid thermal annealing-assisted MOCVD and its application to metal gate electrode", J. Microelectronics Eng., 85, 320-326 (2008).
  • T. Momose, M. Sugiyama, and Y. Shimogaki: "In situ observation of initial nucleation and growth processes in supercritical fluid deposition of copper", Jpn. J. Appl. Phys., 47, 885-890 (2008).
  • T. Nakano, M. Sugiyama, Y. Nakano, and Y. Shimogaki: “Kinetics of Subsurface Formation during Metal-Organic Vapor Phase Epitaxy Growth of InP and InGaP”, Jpn. J. Appl. Phys., 47, 1473-1478 (2008).
  • T. Nakano, T. Shioda, E. Abe, M. Sugiyama, N. Enomoto, Y. Nakano, Y. Shimogaki: “Abrupt InGaP/GaAs hetero-interface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy”, Appl. Phys. Lett., 92, 112106 (2008).
  • B. Zhao, T. Momose, T. Ohkubo, and Y. Shimogaki: “Acetone-assisted deposition of silver films in supercritical carbon dioxide”, Microelectronic Eng., 85, 675-681 (2008).

2007

  • H. Kim and Y. Shimogaki: "Comparative study of Cu-CVD seed layer deposition on Ru and Ta underlayers", J. Electrochem. Soc., 154, G13-17 (2007).
  • W. Wang, T. Nabatame, and Y. Shimogaki: "Dielectric evolution characteristics of HfCN metal-electrode-gated MOS stacks", J. Electrochem. Soc., 154, G25-29 (2007).
  • H. Song, M. Sugiyama, Y. Nakano, and Y. Shimogaki: "Non-linear kinetics of GaAs MOVPE examined by selective area growth technique", J. Electrochem. Soc., 154, H91-96 (2007).
  • Y. Shimogaki, M. Sugiyama, T. Momose, and T. Ohkubo: "Thin Film Deposition using Supercritical Carbon Dioxide (in Japanese)", Function & Materials, 27, 58-65 (2007).
  • H. Song, I.T. Im, M. Sugiyama, Y. Nakano, and Y. Shimogaki: "Non-linear kinetic analysis on GaAs Selective Area MOVPE combined with macro-scale analysis to extract major reaction mechanism", J. Crystal Growth, 298, 32-36 (2007).
  • T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano: "Vapor Phase Diffusion and Surface Diffusion Combined Model for InGaAsP Selective Area Metal-Organic Vapor Phase Epitaxy", J. Crystal Growth, 298, 37-40 (2007).
  • R. Onitsuka, T. Shioda, H. Song, M. Sugiyama, Y. Shimogaki, and Y. Nakano: "Reactor-scale uniformity of selective-area performance in InGaAsP system", J. Crystal Growth, 298, 59-63 (2007).
  • O. Ichikawa, N. Fukuhara, M. Hata, T. Nakano, M. Sugiyama, Y. Shimogaki, and Y. Nakano: "High resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties", J. Crystal Growth, 298, 85-89 (2007).
  • M. Sugiyama, H. Song, M. Deura, Y. Nakano, and Y. Shimogaki: "Impact of atomistic surface structure on macroscopic surface reaction rate in MOVPE of GaAs", Electrochemical and Solid-State Letters, 10, H123-126 (2007).
  • H. Song, M. Sugiyama, Y. Nakano, and Y. Shimogaki: "Non-linear Surface Reaction Kinetics of GaAs MOVPE Explored by Selective Area Growth", ECS Trans., 2, 145-156 (2007).
  • H. Kim, Y. Kojima, N. Yoshii, H. Sato, S. Hosaka, and Y. Shimogaki: "The Effect of Process Parameters on CVD Cu Seed Layer Deposition on Ru and Ta Under-layer", ECS Trans., 2, 157-165 (2007).
  • R. Shimizu, M. Ogino, M. Sugiyama, and Y. Shimogaki: "Predictive Model Extraction for Poly-silicon Low Pressure Chemical Vapor Deposition in a Commercial Scale Reactor", J. Electrochem. Soc., 154, D328-333 (2007).
  • J.-S. Yang, H. Sodabanlu, I. Waki, M. Sugiyama, Y. Nakano, and Y. Shimogaki: "Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN by Pulse Injection Method at 800°C", Jpn. J. Appl. Phys., 46, L927-929 (2007).
  • M. Deura, M. Sugiyama, T. Nakano, Y. Nakano, and Y. Shimogaki: "Kinetic Analysis on the Surface Adsorption Layer in GaAs (001) Metalorganic Vapor Phase Epitaxy by in situ Reflectance Anisotropy Spectroscopy", Jpn. J. Appl. Phys., 46, 6519-6524 (2007).
  • T. Saito, K. Oshima, Y. Shimogaki, Y. Egashira, K. Sugawara, K. Takahiro, S. Nagata, S. Yamaguchi, and H. Komiyama: "Kinetic modeling of tungsten silicide chemical vapor deposition from WF6 and Si2H6: Determination of the reaction scheme and the gas-phase reaction rates", Chem. Eng. Sci., 62, 6403-6411 (2007).
  • T. Shioda, Y. Tomita, M. Sugiyama, Y. Shimogaki, and Y. Nakano: "GaN Selective Area Metal.Organic Vapor Phase Epitaxy: Prediction of Growth Rate Enhancement by Vapor Phase Diffusion Model", Jpn. J. Appl. Phys., 46, L1045-1047 (2007).

2006

  • H. Song, X. Song, M. Sugiyama, Y. Nakano, and Y. Shimogaki: "Effect of group V partial pressure on the kinetics of selective area MOVPE for GaAs on (100) exact and misoriented substrate", J. Crystal Growth, 287, 664-667 (2006).
  • M. Sugiyama, N. Waki, Y. Nobumori, H. Song, T. Nakano, T. Arakawa, Y. Nakano, and Y. Shimogaki: "Control of Abnormal Edge Growth in Selective Area MOVPE of InP", J. Crystal Growth, 287, 668-672 (2006).
  • H. Song, X. Song, M. Sugiyama, Y. Nakano, and Y. Shimogaki: "Effect of surface misorientation on the kinetics of GaAs MOVPE examined using selective area growth", Electrochemical and Solid-State Letters, 9, G104-106 (2006).
  • M. Sugiyama, T. Iino, T. Nakajima, T. Tanaka, Y. Egashira, K. Yamashita, H. Komiyama, and Y. Shimogaki: "Optimization of Al-CVD process based on elementary reaction simulation and experimental verification: From the growth rate to the surface morphology", Thin Solid Films, 498, 30-35 (2006).
  • W. Wang, T. Nabatame, and Y. Shimogaki: "Effect of NH3 on the Fabrication of HfN as Gate-Electrode Using MOCVD", Thin Solid Films, 498, 75-79 (2006).
  • N. Waki, T. Nakano, M. Sugiyma, Y. Nakano, and Y. Shimogaki: "Role of surface diffusion during Selective Area MOVPE growth of InP", Thin Solid Films, 498, 163-166 (2006).
  • T. Shioda, T. Doi, Abdullah Al Amin, X.L. Song, M. Sugiyama, Y. Shimogaki, and Y. Nakano: "Simulation and Design of the Emission Wavelength of Multiple Quantum Well Structures Fabricated by Selective Area Metalorganic Chemical Vapor Deposition", Thin Solid Films, 498, 174-178 (2006).
  • H. Watanabe, T. Tokimitsu, J. Shiga, N. Haneji, and Y. Shimogaki: "Preparation of Amorphous Fluorinated Carbon Film using Low Global-Warming Potential Gas, C4F6, by Plasma Enhanced Chemical Vapor Deposition", Jpn. J. Appl. Phys., 45, L151-153 (2006).
  • H. Kim, Y. Kojima, H. Sato, N. Yoshii, S. Hosaka, and Y. Shimogaki: "Influence of crystal orientation of Ru under-layer on initial growth of copper chemical vapor deposition", Jpn. J. Appl. Phys., 45, L233-235 (2006).
  • H. Kim, T. Koseki, T. Ohba, T. Ohta, Y. Kojima, H. Sato, S. Hosaka, and Y. Shimogaki: "Effect of Ru crystal orientation on the adhesion characteristics of Cu for Ultra-Large Scale Integration interconnects", Appl. Surf. Sci., 252, 3938-3942 (2006).
  • H. Kim, Y. Naito, T. Koseki, T. Ohba, T. Ohta, Y. Kojima, H. Sato, and Y. Shimogaki: "Material consideration on Ta, Mo, Ru and Os as glue layer for Ultra Large Scale Integration Cu interconnects", Jpn. J. Appl. Phys., 45, 2497-2501 (2006).
  • H. Watanabe and Y. Shimogaki: "Source Gas Dependency of Amorphous Fluorinated Carbon Film Properties Prepared by Plasma Enhanced Chemical Vapor Deposition Using C4F8, C4F6, and C5F8 Gases", Jpn. J. Appl. Phys., 45, L463-466 (2006).
  • T. Saito, Y. Shimogaki, Y. Egashira, K. Sugawara, K. Takahiro, S. Nagata, S. Yamaguchi, and H. Komiyama: "Kinetics of Chemical Vapor Deposition of WSix films from WF6 and SiH2Cl2: Effect of added H2, SiH4, and Si2H6", Microelectronic Engineering, 83, 1994-2000 (2006).
  • T. Saito, Y. Shimogaki, Y. Egashira, K. Sugawara, K. Takahiro, S. Nagata, S. Yamaguchi, H. Komiyama: "Kinetic study of Chemical Vapor Deposition of WSix films from WF6 and SiH2Cl2 : Determination of Molecular Size and Reactivity of Gas Species", Thin Solid Films, 513, 36-42 (2006).
  • W. Wang, T. Nabatame, and Y. Shimogaki: "High temperature annealing-induced phase transformation characteristic of nitrogen-rich hafnium nitride films", Jpn. J. Appl. Phys., 45, L1183-1185 (2006).
  • T. Momose and Y. Shimogaki: "In situ observation on initial nucleation and growth of chemical vapor deposition of copper by surface reflectivity measurement", Jpn. J. Appl. Phys., 45, 8618-8623 (2006).
  • H. Watanabe and Y. Shimogaki: "Preparation and Characterization of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C4F6, by Plasma Enhanced Chemical Vapor Deposition", Jpn. J. Appl. Phys., 45, 8624-8628 (2006).
  • T. Nakano, Y. Nakano, and Y. Shimogaki: "Novel gas-switching sequence using group-III pre-flow (GIIIP) method for fabrication of InGaP on GaAs hetero-interface by MOVPE", J.Crystal Growth, 296, 179-185 (2006).
  • B. Zhao, T. Momose, and Y. Shimogaki: "Deposition of Cu-Ag Alloy Film by Supercritical Fluid Deposition", Jpn. J. Appl. Phys., 45, L1296-1299 (2006).
  • W. Wang, T. Nabatame, and Y. Shimogaki: "Dielectric Evolution Characteristics of HfCN Metal Electrode Gated MOS Stacks", ECS Trans., 1, 529-538 (2006).
  • T. Nakano, M. Sugiyama, E. Abe, Y. Shimogaki, and Y. Nakano: "Abruptness of GaAs/InGaP Hetero Interfaces Analyzed by Z-contrast STEM (in Japanese)", Materia Japan, 45, 853 (2006).

2005

  • W. Wang, T. Nabatame, and Y. Shimogaki: "Fabrication of Hf(C)N Films on SiO2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor", Jpn. J. Appl. Phys., 44, L348-351 (2005).
  • I.T. Im, M. Sugiyama, Y. Shimogaki, and Y. Nakano: "A Numelical Study on Heat Transfer and Filjm Growth Rate of InP and GaAs MOCVD Process", J. Crystal Growth, 276, 431-438 (2005).
  • E. Jimbo, M. Suzuki, K. Sugawara, Y. Shimogaki, Y. Egashira, and H. Komiyama: "Computer Simulation of thermal CVD WSix Film Formation for VLSI Fabrication to evaluate Soret (Thermal Diffusion) Effect quantitatively", J. of The College of Engineering, Nihon University, 46, #2, 67-74 (2005) (Japanese).
  • M. Ohnishi, T. Nishida, K. Sugawara, Y. Shimogaki, and Y. Egashira: "Computer Simulation of Plasma Enhanced CVD Film Formation for Very High Speed VLSI Application - Low-k Plasma enhanced CVD SiOxFy Film Formation", J. of The College of Engineering, Nihon University, 46, #2, 75-82 (2005) (Japanese).
  • H. Kim, T. Koseki, T. Ohba, T. Ohta, Y. Kojima, H. Sato, and Y. Shimogaki: "Cu wettability and diffusion barrier property of Ru thin film for Cu metallization", J. Electrochem. Soc., 152, G594-G600 (2005).
  • W. Wang, T. Nabatame, and Y. Shimogaki: "Interface structure of HfNx/SiO2 stack grown by MOCVD using TDEAHf precursor", Surf. Sci., 588, 108-116 (2005).
  • W. Wang, T. Nabatame, N. Haneji, and Y. Shimogaki: "Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by MOCVD", Jpn. J. Appl. Phys., 44, L1019-1021 (2005).
  • T. Arakawa, Y. Awa, T. Ide, N. Haneji, K. Tada, M. Sugiyama, H. Shimizu, Y. Shimogaki, and Y. Nakano: "Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH4/H2/Ar and O2with Constant Ar Flow", Jpn. J. Appl. Phys., 44, 5819-5823 (2005).
  • T. Momose, M. Sugiyama, and Y. Shimogaki: "Precursor Evaluation for Cu-SCFD Based on Adhesion Properties and Surface Morphology", Jpn. J. Appl. Phys., 44, L1199-1202 (2005).
  • H. Kim, T. Koseki, T. Ohba, T. Ohta, Y. Kojima, H. Sato, and Y. Shimogaki: "Process design of Cu(Sn) alloy deposition for highly reliable Ultra Large-Scale Integration (ULSI) interconnects", Thin Solid Films, 491, 221-227 (2005).
  • B. Zhao, H. Kim, and Y. Shimogaki: "Effects of Ag Addition on the Resistivity, Texture and Surface Morphology of Cu Metallization", Jpn. J. Appl. Phys., 44, L1278-1281 (2005).
  • I.T. Im, N.J. Choi, M. Sugiyama, Y. Nakano, Y. Shimogaki, B.H. Kim, and K.S. Kim: "Effct of Thermal Contact Resistance on Film Growth Rate in a Horizontal MOCVD Reactor", J. Mechanical Science and Technology, 19, 1338-1346 (2005).
  • M. Sugiyama, A. Al Amin, K. Sakurai, X. Song, F. C. Yit, N. Li, I. Waki, Y. Shimogaki, and Y. Nakano: "Dry etching technique of compound semiconductors for optical device applications", Shinku, 48, 511-518 (2005) (Japanese).

2004

  • I.T. Im, H.J. Oh, M. Sugiyama, Y. Nakano, and Y. Shimogaki: "Fundamental kinetics determining growth rate profiles of In and GaAs in MOCVD with horizontal reactor", J. Crystal Growth, 261, 214-224 (2004).
  • M. Sugiyama, H.J. Oh, Y. Nakano, and Y. Shimogaki: "Polycrystals growth on dielectric masks during InP/GaAs selective MOVPE", J. Crystal Growth, 261, 411-418 (2004).
  • H.J. Oh, M. Sugiyama, Y. Nakano, and Y. Shimogaki: "The effect of group V precursor on selective area MOVPE of InP/GaAs-related materials", J. Crystal Growth, 261, 419-426 (2004).
  • N.I. Cho, M.C. Kim, K.H. Rim, H.J. Chang, K. Jun, and Y. Shimogaki: "Deposition of Copper Thin Films on Titanium Nitride Layer Prepared by Flow Modulation CVD Technology", Mat. Sci. Forum., 449-452, 457-460 (2004).
  • K. Jun, I.T. Im, and Y. Shimogaki: "Improvement of TiN Flow Modulation Chemical Vapor Deposition from TiCl4 and NH3 by Introducing Ar Purge Time", Jpn. J. Appl. Phys., 43, 1619-1624 (2004).
  • K. Jun and Y. Shimogaki: "Effect of Partial Pressure of TiCl4 and NH3 on Chemical Vapor Deposition Titanium Nitride (CVD-TiN) Film Cl Content and Electrical Resistivity", Jpn. J. Appl. Phys., 43, L519-L521 (2004).
  • Y. Kajikawa, T. Tsumura, S. Noda, H. Komiyama, and Y. Shimogaki: "Nucleation of W during Chemical Vapor Deposition from WF6 and SiH4", Jpn. J. Appl. Phys., 43, 3945-3950 (2004).
  • Y.H. Shin and Y. Shimogaki: "Diffusion Barrier Property of TiN and TiN/Al/TiN Films Deposited with FMCVD for Cu Interconnection in ULSI", Sci. Tech. Adv. Mater., 5, 399-405 (2004).
  • S. Noda, R. Hirai, H. Komiyama, and Y. Shimogaki: "Selective Silicidation of Co Using Silane or Disilane for Anti-Oxidation Barrier Layer in Cu Metallization", Jpn. J. Appl. Phys., 43, 6001-6007 (2004).
  • R. Shimizu, M. Ogino, M. Sugiyama, and Y. Shimogaki: "Analysis and Modeling of Low Pressure CVD of Phosphorus-doped Ploy-silicon in Commercial Scale Reactor ", J. Vac. Sci. & Tech. A, 22, 1763-1766 (2004).
  • N. Li, I. Waki, C. Kumtornkittikul, M. Sugiyama, Y. Shimogaki, and Y. Nakano: "Fabrication of GaN-Based Waveguides by Inductively Coupled Plasma Etching", Jpn. J. Appl. Phys., 43, L1340-1342 (2004).
  • S. Noda, T. Tsumura, J. Fukuhara, T. Yoda, H. Komiyama, and Y. Shimogaki: "Stranski-Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy", Jpn. J. Appl. Phys., 43, 6974-6977 (2004).
  • K. Jun and Y. Shimogaki: "Kinetics of TiN Chemical Vapor Deposition Process using TiCl4 and NH3 for ULSI Diffusion Barrier Applications: Relationship between Step Coverage and NH3 Partial Pressure", Jpn. J. Appl. Phys., 43, 7287-7291 (2004).
  • W.W. Wang, T. Nabatame, and Y. Shimogaki: "The Fabrication of Hafnium Nitride by MOCVD using TDEAHf for Gate-electrode Application", Jpn. J. Appl. Phys., 43, L1445-1448 (2004)
  • K. Jun and Y. Shimogaki: "Development of TiSiN CVD process using TiCl4/SiH4/NH3 chemistry for ULSI anti-oxidation barrier applications", Sci. Tech. Adv. Mater., 5, 549-555 (2004).
  • T. Nakano, M. Sugiyama, Y. Nakano, and Y. Shimogaki: "The Role of the Surface Adsorption Layer during MOVPE Growth Analyzed by the Flow Modulation Method", J. Crystal Growth, 272, 15-23 (2004).
  • Y.H. Shin and Y. Shimogaki: "Chemical Vapor Deposition of TiAlN Film by Using Titanium Tetrachloride, Di-methylethylamine Alane, and Ammonia Gas", Jpn. J. Appl. Phys., 43, 8253-8257 (2004).
  • I. Waki, C. Kumotornkittikul, Y. Shimogaki, and Y. Nakano: "Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy", Appl. Phys. Lett., 84, 3703 (2004). (Original article; Appl. Phys. Lett., 82, 4465 (2003)).

2003

  • H.J. Oh, M. Sugiyama, Y. Nakano, and Y. Shimogaki: "Comparison of organic and hydride group V precursors in terms of surface kinetics in wide-gap selective area metalorganic vapor phase epitaxy", Jpn. J. Appl. Phys., 42, L1195-L1197 (2003).
  • N. Haneji, G. Segami, T. Ide, T. Suzuki, T. Arakawa, K. Tada, Y. Shimogaki, and Y. Nakano: "Electron cyclotron resonance-reactive ion etching of III-V semiconductors by cyclic injection of CH4/H2/Ar and O2with constant Ar flow", Jpn. J. Appl. Phys., 42, 3958-3961 (2003).
  • H.J. Oh, M. Sugiyama, Y. Nakano, and Y. Shimogaki: "Factors determining the generation of polycrystalline growth over masks in selective-area metalorganic vapor phase epitaxy: Gas-phase concentration analysis", Jpn. J. Appl. Phys., 42, L359-L361 (2003).
  • I. Waki, C. Kumtornkittikul, Y. Shimogaki, and Y. Nakano: "Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy", Appl. Phys. Lett., 82, 4465-4467 (2003)., Errata of this article : Appl. Phys. Lett., 84, 3703 (2004).
  • H.J. Oh, M. Sugiyama, Y. Nakano, and Y. Shimogaki: "Surface reaction kinetics in metalorganic vapor phase epitaxy of GaAs through analyses of growth rate profile in wide-gap selective-area growth", Jpn. J. Appl. Phys., 42, 6284-6291 (2003).
  • E. Jimbo, K. Sugawara, M. Sugiyama, Y. Shimogaki, and Y. Egashira: "Computer-simulated visualization of reactant gas concentration distribution during InP CVD film formation", Jpn. J. Appl. Phys. Edu., 27, 111-114 (2003) (Japanese).
  • K. Sugawara, T. Muranushi, Y.K. Chae, Y. Shimogaki, H. Komiyama, and Y. Egashira: "Computer simulation of WSix chemical vapor deposition - Quantitative analysis of abnormal inlet gas flow effect -", J. Coll. Eng. Nihon Univ., 45, 117-126 (2003).
  • E. Jimbo, K. Sugawara, M. Sugiyama, Y. Shimogaki, Y. Nakano, H. Komiyama, and Y. Egashira: "Computer simulation of MOCVD film formation for semiconductor devices including Soret Effect", J. Coll. Eng. Nihon Univ., 45, 127-132 (2003).

2002

  • Y.S. Kim, H. Hamamura, and Y. Shimogaki: "Adhesion characteristics between chemical vapor deposited Cu and TiN films: Aspects of process integration", Jpn. J. Appl. Phys., 41, 1500-1506 (2002).
  • M. Sugiyama, H. Ogawa, Y. Sato, H. Itoh, J. Aoyama, Y. Horiike, H. Komiyama, and Y. Shimogaki: "Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy: Theoretical Optimization Procedure (3)", Jpn. J. Appl. Phys., 41, 570-576 (2002).
  • I. Waki, C. Kumtornkittikul, K. Sato, Y. Shimogaki, and Y. Nakano: "Characterization of Crack-Free AlN/GaN Multiple Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy Using H2 as a Carrier Gas", phys. stat. sol. (b), 234, 961-964 (2002).
  • D.S. Tsai, T.C. Chang, W.C. Hsin, H. Hamamura, and Y. Shimogaki: "Surface reaction probabilities of radicals correlated from film thickness contours in silane chemical vapor deposition", Thin Solid Films, 411, 177-184 (2002).
  • W.C. Hsin, D.S. Tsai, and Y. Shimogaki: "Surface reaction probabilities of silicon hydride radicals in SiH4/H2 thermal chemical vapor deposition", Ind. & Eng. Chem. Res., 41, 2129-2135 (2002).
  • T. Suzuki, N. Haneji, K. Tada, Y. Shimogaki, and Y. Nakano: "Electron Cyclotron Resonance-Reactive Ion Beam Etching of InP by Cyclic Injection of CH4/H2/Ar and O2", Jpn. J. Appl. Phys., 41, 15-19 (2002).

2001

  • H. Hamamura, H. Komiyama, and Y. Shimogaki: "TiN films preapred by flow modulation chemical vapor deposition (FMCVD) using TiCl4 and NH3", Jpn.J.Appl.Phys., 40, 1517-1521(2001).
  • Y.S. Kim and Y. Shimogaki: "Physical and chemical contributions of interfacial impurities to film adhesion", Jpn. J. Appl. Phys., 40, L1380-L1383 (2001).
  • Y.S. Kim and Y. Shimogaki: "X-ray photoelectron spectroscopic characterization of the adhesion behavior of chemical vapor deposited copper films", J. Vac. Sci. Tech. A., 19, 2642-2651 (2001).

2000 - 1996

  • S.W. Lim, Y. Shimogaki, Y. Nakano, K. Tada, and H. Komiyama: "Preparation of low dielectric constant F-doped SiO2 films by plasma enhanced chemical vapor deposition", Appl. Phys. Lett., 68, 832-834 (1996).
  • S.W. Lim, Y. Shimogaki, Y. Nakano, K. Tada, and H. Komiyama: "Preparation of low dielectric constant F-doped SiO2 films by PECVD", Jpn. J. Appl. Phys., 35, 1468-73 (1996).
  • M. Sugiyama, T. Yamaizumi, M. Nezuka, Y. Shimogaki, Y. Nakano, K. Tada, and H. Komiyama: "Simple kinetic model of ECR-RIBE reactor for the optimization of GaAs etching process", Jpn. J. Appl. Phys., 35, 1235-1241 (1996).
  • S. Sudo, H. Onishi, Y. Nakano, Y. Shimogaki, K. Tada, M.J. Mondry, and L.A. Coldren: "Impurity-free disordering of InGaAs/InGaAlAs quantum wells on InP by dielectric thin cap films and characterization of its in-plane spatial resolution", Jpn. J. Appl. Phys., 35, 1276-1279 (1996).
  • Y. Egashira, H. Aita, T. Saito, Y. Shimogaki, H. Komiyama, K. Sugawara: "Modeling and simulation of blanket chemical vapor deposition of WSix from WF6-Si2H6", Electron. Commun. Jpn. 2, Electron., 79, 83-92 (1996).
  • S.W. Lim, T. Naito, M. Miyata, Y. Shimogaki, Y. Nakano, K. Tada, and H. Komiyama: "Reduction mechanism in the dielectric constant of F-doped silicon dioxide film", J. Electrochemical Soc., 144, 2531-2537 (1997).
  • K. Nishioka, M. Sugiyama, Y. Shimogaki, Y. Nakano, K. Tada, and H. Komiyama: "Optimization analysis of ECR-RIBE reactors for the dry etching process of GaAs with Cl2", J. Electrochem. Soc., 144, 3191-3197 (1997).
  • M. Sugiyama, K. Kusunoki, Y. Shimogaki, S. Sudo, Y. Nakano, H. Nagamoto, K. Sugawara, K. Tada, and H. Komiyama: "Kinetic studies on thermal decomposition of MOVPE sources using Fourier transform infrared spectroscopy", Appl. Surf. Sci., 117/118, 746-752 (1997).
  • H. Hamamura, H. Itoh, Y. Shimogaki, J. Aoyama, T. Yoshimi, J. Ueda, and H. Komiyama: "Structural change of TiN/Ti/SiO2 multilayers by N2 annealing", Thin Solid Films, 320, 31-34 (1998).
  • Y. K. Chae, Y. Egashira, Y. Shimogaki, K. Sugawara, and H. Komiyama: "Experimental and numerical analysis of rapid reaction to initiate the radical chain reactions in WSix CVD", Thin Solid Films, 320, 151-158 (1998)., Erratum to this manuscript, Thin Solid Films, 340, 317 (1999).
  • Y.K. Chae, Y. Shimogaki, and H. Komiyama: "The role of gas-phase reactions during chemical vapor deposition of copper from (hfac)Cu(tmvs)", J. Electrochem. Soc., 145, 4226-4233 (1998).
  • S. Sudo, Y. Nakano, M. Sugiyama, Y. Shimogaki, H. Komiyama, and K. Tada: "In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry", Thin Solid Films, 313/314, 604-608 (1998).
  • Y.K. Chae, Y. Egashira, Y. Shimogaki, K. Sugawara, and H. Komiyama: "Chemical vapor deposition reactor design using small-scale diagnostic experiments combined with computational fluid dynamics simulations", J. Electrochem. Soc., 146, 1780-1788 (1999).
  • H. Komiyama, Y. Shimogaki, and Y. Egashira: "Chemical reaction engineering in the design of CVD reactors", Chemical Engineering Science, 54, 1941-1957 (1999).
  • S.W. Lim, Y. Shimogaki, Y. Nakano, K. Tada, and H. Komiyama: "Changes in orientational polarization and structure of silicon dioxide films by fluorine addition - reduction mechanism in the dielectric constant of F-doped silicon oxide film, Part (2) -", J. Electrochem. Soc., 146, 4196-4202 (1999).
  • M. Sugiyama, T. Iino, H. Itoh, J. Aoyama, H. Komiyama, and Y. Shimogaki: "Effect of underlayers on the morphology and orientation of aluminum films prepared by chemical vapor deposition using dimethlaluminumhydride", Jpn. J. Appl. Phys., 38, L1528-L1531 (1999).
  • S.W. Lim, Y. Shimogaki, Y. Nakano, K. Tada, and H. Komiyama: "Decrease in deposition rate and improvement of step coverage by CF4 addition to plasma-enhanced chemical vapor deposition silicon dioxide films", Jpn. J. Appl. Phys., 39, 330-336 (2000).
  • M. Sugiyama, H. Itoh, J. Aoyama, H. Komiyama, and Y. Shimogaki: "Reaction analysis of aluminum chemical vapor deposition from dimethyl-aluminum-hydride using tubular reactor and Fourier-transform infrared spectroscopy : Theoretical process optimization procedure (1)", Jpn. J. Appl. Phys., 39, 1074-1079 (2000).
  • M. Sugiyama, T. Nakajima, T. Tanaka, H. Itoh, J. Aoyama, Y. Egashira, K. Yamashita, H. Komiyama, and Y. Shimogaki: "Elementary surface reaction simulation of aluminum chemical vapor deposition from dimethylaluminumhydride based on Ab Initio calculations: Theoretical process optimization procedure (2)", Jpn. J. Appl. Phys., 39, 6501-6512 (2000).
  • M. Sugiyama, O. Feron, S. Sudo, Y. Nakano, K. Tada, H. Komiyama, and Y. Shimogaki: "Kinetics of GaAs metal organic chemical vapor deposition studied by numerical analysis based on experimental reaction data", Jpn. J. Appl. Phys., 39, 1642-1649 (2000).
  • L.S. Hong, Y. Shimogaki, and H. Komiyama: "Macro/microcavity method and its application in modeling chemical vapor deposition reaction systems", Thin Solid Films, 365, 176-188 (2000).
  • M. Tabuchi, R. Takahashi, M. Araki, K. Hirayama, N. Futakuchi, Y. Shimogaki, Y. Nakano, and Y. Takeda: "X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes", Appl. Surf. Sci., 159-160, 250-255 (2000).
  • O. Feron, Y. Feurprier, Y. Shimogaki, M. Sugiyama, W. Asawamethapant, N. Futakuchi, and Y. Nakano: "MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates : distribution of composition and growth rate in a horizontal reactor", Appl. Surf. Sci., 159-160, 318-327 (2000).
  • O. Feron, Y. Nakano, and Y. Shimogaki: "Kinetic study of P and As desorption from binary and ternary III-V semiconductors surface by in-situ ellipsometry", J. Crystal Growth, 221, 129-135 (2000).
  • T. Nakano, Y. Nakano, and Y. Shimogaki: "Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE", J. Crystal Growth, 221, 136-141 (2000).
  • M. Kunishige, K. Sugawara, Y.K. Chae, Y. Shimogaki, Y. Egashira, and H. Komiyama: "CVD reactor design using three-dimensional computer simulation -Gas outlet effect-", Kagaku Kogaku Ronbunshu (in Japanese), 26, 758-762 (2000).

1995 - 1991

  • L.S. Hong, Y. Shimogaki, Y. Egashira, and H. Komiyama: "Composition change of SiCx (x=1-2) films due to variation of film precursors in the Si2H6/C2H2 chemical vapor deposition reaction system",Appl. Phys. Lett., 61, 910-912 (1992).
  • L.S. Hong, Y. Shimogaki, Y. Egashira, and H. Komiyama: "Study of the reaction of Si2H6 in the presence of C2H2 in synthesis of SiC films by LPCVD using a macro/microcavity method", J. Electrochem. Soc., 139, 3652-3659 (1992).
  • T. Saito, Y. Shimogaki, Y. Egashira, H. Komiyama, Y. Yuyama, and K. Sugawara: "Conformal deposition of WSix films on micron-sized trenches : The reactivity of film precursors", Appl. Phys. Lett., 61, 764-765 (1992).
  • Y. Shimogaki, T. Uchida, S. Shiga, and H. Komiyama: "Monte Carlo simulation on the step coverage formation process in chemical vapor deposition", Journal de Physique, IV, 3 C3, 203-203 (1993).
  • T. Saito, Y. Shimogaki, Y. Egashira, H. Komiyama, Y. Yuyama, K. Sugawara, S. Nagata, K. Takahiro, and S. Yamaguchi: "Existence of extinction temperature in WSix film growth from WF6 and SiH4 : An indication of the role played by radical chain reactions", Appl. Phys. Lett., 62, 1606-1608 (1993).
  • D.K. Gautam, Y. Shimogaki, Y. Nakano, and K. Tada: "Impurity diffusion into GaAs through the SiO2 protective layers", Materials Science Forum, 117-118, 417-422 (1993).
  • K.Fujino, Y.Egashira, Y.Shimogaki, and H. Komiyama: "Step-coverage simulation for tetraethoxysilane and ozone atmospheric pressure chemical vapor deposition", J. Electrochem. Soc., 140, 2309-2312 (1993).
  • T. Saito, Y. Yuyama, Y. Egashira, Y. Shimogaki, K. Sugawara, H. Komiyama, S. Nagata, K. Takahiro, and S. Yamaguchi: "Deposition of WSix films from preactivated mixture of WF6/SiH4", Jpn. J. Appl. Phys.,33, 275-279 (1994).
  • K. Fujino, Y. Egashira, Y. Shimogaki, and H. Komiyama: "Step coverage analysis for hexamethyldisiloxane and ozone atmospheric pressure chemical vapor deposition", Jpn. J. Appl. Phys., 33, L473-475 (1994).
  • M. Sugiyama, T. Yamaizumi, M. Nezuka, Y. Shimogaki, Y. Nakano, K. Tada, and H. Komiyama: "A simple kinetic model for the optimization of electron cyclotron resonance/reactive ion beam etching performance for GaAs", Appl. Phys. Lett., 67, 897-899 (1995).
  • K. Okamoto, A. Yamada, Y. Shimogaki, Y. Nakano, and K. Tada: "Characterization of P- and N-type impurity diffusions in GaAs from silica films", Jpn. J. Appl. Phys., 34, 1127-1134 (1995).
  • T. Saito, Y. Shimogaki, Y. Egashira, H. Komiyama, K. Sugawara, K. Takahiro, S. Nagata, and S. Yamaguchi: "Kinetic study of WSix-CVD processes - A comparison of WF6/SiH4 and WF6/Si2H6 reaction systems -", Electron. Commun. Jpn. 2, Electron., 78, 73-84 (1995).

1990 - 1984

  • Y. Shimogaki, H. Komiyama, H. Inoue, T. Masumoto, and H. Kimura: "Porous and amorphous Ni67Zr33 catalyst prepared by hydrogenation of carbon monoxide", Chem. Lett., 1985, 661-664 (1985).
  • Y. Shimogaki and H. Komiyama: "Preparation of amorphous TiO2 films by thermophoresis-aided chemical vapor deposition", Chem. Lett., 1986, 267-268 (1986).
  • Y. Shimogaki and H. Komiyama: "Rapid growth of TiO2 films by particle-precipitation aided chemical vapor deposition", J. Ceram. Soc. Jpn, Int. ed., 95, 65-69 (1987).
  • Y. Shimogaki, H. Komiyama, H. Inoue, T. Masumoto, and H. Kimura: "Activation mechanism of amorphous NixZr100-x alloys during CO/H2 reaction and preparation method of porous amorphous catalysts", J. Chem. Eng. Jpn., 21, 293-299 (l988).
  • H. Oyamada, Y. Shimogaki, and H. Komiyama: "Control of particle and film growth by total pressure in LPCVD - Preparation of SiC from SiH4 and C6H6 - (in Japanese)", Kagaku Kougaku Ronbunshu, 16, 463-468 (1990).